I have to read the article and go through the formulas, I only read two pages so far, so far so good, the model is exactly what I understand. Another thing, I never deal with low frequency and audio range low noise circuits. My designs is at least from 1MHz to 500MHz wide band and RF. I just never seen or even read anything on parallel.
But let me comment first. It is not straight forward to calculate noise, all different sources has to be root mean summed together.
1) Even the paper said in the first paragraph that the input resistance is very important and it is independent of parallel transistors/tubes.
2)For BJT and even tubes, grid current cause noise. For BJT, base current does not get reduced with more transistors in parallel. In fact it is likely to increase as BETA goes down when you reduce the collector current ( as you parallel more transistors).
I have not finished going through the calculation in the paper, this is from my knowledge:
As I said before, parallel more transistor is like making a bigger transistor. I designed IC before, a big transistor just simply has more emitter and base "fingers" and it's like a few transistors in parallel. The main noise contributing factor is the base spread resistance, so called rx in the paper. You reduce rx as much as possible for low noise transistors. This is where large geometry transistor comes into play. The more cross sectional area, the lower the resistance per unit length. This can be done by parallel transistor or bigger transistor.
Honestly, I have not seen any low noise design using many parallel transistor because of the increase in parasitic is very hard to deal with. I designed the front of ultra sound medical image scanner with color doppler in the 80s, we deal with signal in low uV range and in wide band. We never use parallel transistor because it was not a win after doing calculation. AND try to do parallel in RF circuits!!! You don't just stack transistor up!!! Every connection is a transmission line distribution elements and try to split and sum back all the transistors!!!!
There might be advantage of parallel devices, I need to look at the calculation. But I can tell you, there are a lot of other factors involve that might not make it practical, not to mention you can buy transistor that are designed specially for low noise.
But let me comment first. It is not straight forward to calculate noise, all different sources has to be root mean summed together.
1) Even the paper said in the first paragraph that the input resistance is very important and it is independent of parallel transistors/tubes.
2)For BJT and even tubes, grid current cause noise. For BJT, base current does not get reduced with more transistors in parallel. In fact it is likely to increase as BETA goes down when you reduce the collector current ( as you parallel more transistors).
I have not finished going through the calculation in the paper, this is from my knowledge:
As I said before, parallel more transistor is like making a bigger transistor. I designed IC before, a big transistor just simply has more emitter and base "fingers" and it's like a few transistors in parallel. The main noise contributing factor is the base spread resistance, so called rx in the paper. You reduce rx as much as possible for low noise transistors. This is where large geometry transistor comes into play. The more cross sectional area, the lower the resistance per unit length. This can be done by parallel transistor or bigger transistor.
Honestly, I have not seen any low noise design using many parallel transistor because of the increase in parasitic is very hard to deal with. I designed the front of ultra sound medical image scanner with color doppler in the 80s, we deal with signal in low uV range and in wide band. We never use parallel transistor because it was not a win after doing calculation. AND try to do parallel in RF circuits!!! You don't just stack transistor up!!! Every connection is a transmission line distribution elements and try to split and sum back all the transistors!!!!
There might be advantage of parallel devices, I need to look at the calculation. But I can tell you, there are a lot of other factors involve that might not make it practical, not to mention you can buy transistor that are designed specially for low noise.
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