I was reading on this site(Troubleshooting & Repair Guide)
Section 5.1
In the most general of terms, with any bipolar transistor (FETs and MOSFETs are completely different!), there should be about 600-700mV measured between the emitter and base
Am I right in understanding one probe on emitter and one probe on base?
Than
Section 5.1
In the most general of terms, with any bipolar transistor (FETs and MOSFETs are completely different!), there should be about 600-700mV measured between the emitter and base
Am I right in understanding one probe on emitter and one probe on base?
Than
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